※ Device appearance may change with the lot. |
• Wide range of vacuum degree: 1×10 +5 Pa to 9×10 -5 Pa • Big substrate size: Max φ100mm（4inch） |
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1.规格参数 Specifications
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基底尺寸 Substrate size
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φ100mm(4 inch) max (或 φ20mm x 4)
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基底加热温度 Substrate heating temp
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Up to 400 ℃ (PID控制)
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腔体材质 Chamber materials
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・真空腔 Vacuum chamber
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不锈钢 Stainless steel SUS304
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・反应腔 Reaction chamber
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不锈钢 Stainless steel SUS316L
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极限真空度 Ultimate vacuum
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9×10 -5 Pa
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抽运能力 Pumping
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・涡轮高真空泵 Turbo molecular pump
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200 L/sec
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・干燥泵 Dry pump
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500 L/min
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前驱体 Precursor
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・系统数 Number of Systems
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3系统 (标准型号，可另外增加1系统)
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・能力 Capacity
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50cc (标准型号)
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・加热温度 Heating temp
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Up to 150 ℃ (PID控制)
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ALD阀 ALD valve
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隔膜阀 Diaphram valve by Swagelok
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运载气体 Carrier gas
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N 2 (可通过流量控制器控制)
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控制系统 Control system
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・触控显示 Touch-panel display
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控制系统可以设置打开/关闭阀门、循环个数以及多种内部锁。
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・紧急停止 Emergency stop switch
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急停按钮位于机体上方醒目位置。按下后将安全关闭所有阀门及系统主电源。
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尾气净化处理性能 Elimination
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・TRAPPACK
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Reaction products in exhaust gas is eliminated.
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2.设备参数 Utiltiy
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电源 Electric power requirements
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1 system 3φ AC200V 30A 电缆长度 Cable length 10m
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工作气体 Gasses
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1 system N 2 (for carrier and purge)压力 Pressure 0.05MPa
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气压 Pneummatic pressure
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1 system for operating valve 压力 Pressure 0.8MPa
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外形尺寸 Dimensions
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1200mm(W) x 800mm(D) x 1400mm(H)
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重量 Weight
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280kg (292kg/m 2 )
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3.偏差值 Acceptance
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条件：φ100mm (4 inch) / Si晶元 / 沉积30nm薄膜
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(1)薄膜厚度分布 Film thickness distribution
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Within ±2%
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(2)反射率 Refraction index
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Within ±2%
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KINDO Semiconductor Inc.
TEL：(+86)0592-608-1180
Office hours：8:30 AM-17:30 PM
Address·：A310, Haijing Rd. 278, Haicang, Xiamen
Email：info@kindoinc.com
KINDO Inc.
TEL：(+81)050-5575-2046
Office hours：9:30 AM-18:30 PM
Address：Toyosaki3-16-16,Kitaku, Osaka
Email：info@kindoinc.co.jp
